Interaction of Co thin films with SiO2: Effect of Co loading

Electron microscopy studies of Co films (1 and 4 nm) supported on SiO2 reveal how the morphology and composition of the system vary following heating at 500 °C in dependence on atmosphere (H2, air) and Co loading. We have shown that for small Co loading, chemistry of the metal–gas interface strongly influences the metal-support interaction. After heating in H2 at 500 °C of 1 and 4 nm thick Co films supported on SiO2 layer we established formation of α-Co2SiO4 and Co particles, respectively.