Title of article
Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application
Author/Authors
Kai-Hsuan Lee، نويسنده , , Ping-Chuan Chang، نويسنده , , Shoou-Jinn Chang، نويسنده , , Yan-Kuin Su، نويسنده , , San Lein Wu، نويسنده , , Manfred Pilkuhn، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2012
Pages
6
From page
899
To page
904
Abstract
InGaN materials grown by metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMG) and triethylgallium (TEG) as alkyl source were compared. Ga-doped ZnO (GZO) films using radio frequency (RF) magnetron sputtering to feature Schottky contacts onto InGaN epitaxial layer with AlN or Mg-doped GaN in-situ capping layer were demonstrated. It is of great potential in application to high performance InGaN photosensors.
Keywords
Semiconductors , Epitaxial growth , Chemical vapor deposition (CVD)
Journal title
Materials Chemistry and Physics
Serial Year
2012
Journal title
Materials Chemistry and Physics
Record number
1064446
Link To Document