• Title of article

    Thermal annealing effect on Y2O3:Eu3+ phosphor films prepared by yttrium 2-methoxyethoxide sol–gel precursor

  • Author/Authors

    M.K. Chong، نويسنده , , K. Pita، نويسنده , , C.H. Kam، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2006
  • Pages
    4
  • From page
    329
  • To page
    332
  • Abstract
    In this work, we demonstrate that yttrium 2-methoxyethoxide is a convenient sol–gel precursor to synthesize the Y2O3:Eu3+ phosphor films. The crystallization of Y2O3:Eu3+ phosphor films prepared from the yttrium 2-methoxyethoxide occurs at about 550 °C. We have also observed that our Y2O3:Eu3+ phosphor films undergo crystal structure change above annealing temperature of 750 °C which is not previously observed in the sol–gel fabrication method. The change of photoluminescent (PL) spectra is related to the evolution of Y2O3 crystal structure. It is shown in this investigation that the post-annealing treatment will help to produce phosphor films of improved brightness. The reasons assigned are the effective elimination of OH impurities and the grain growth of phosphor films.
  • Keywords
    Photoluminescence spectroscopy , Optical materials , Sol–gel growth
  • Journal title
    Materials Chemistry and Physics
  • Serial Year
    2006
  • Journal title
    Materials Chemistry and Physics
  • Record number

    1064903