Title of article
Raman scattering investigation of MnxFe1−xIn2S4 solid solutions
Author/Authors
M. Guc، نويسنده , , V.V. Ursaki، نويسنده , , I.V. Bodnar، نويسنده , , D.V. Lozhkin، نويسنده , , E. Arushanov، نويسنده , , V. Izquierdo-Roca، نويسنده , , A. Pérez Rodr?guez، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2012
Pages
6
From page
883
To page
888
Abstract
Spinel-type MnxFe1−xIn2S4 solid solutions grown by the planar melt crystallization method (the horizontal version of the Bridgman method) are investigated by means of energy dispersive X-ray analysis and Raman scattering spectroscopy for x values from 0 to 1. The distribution of cations in octahedral and tetrahedral sites of the spinel structure is analysed on the basis of the behaviour of Raman active vibration modes. Additionally, the assignment of Raman active modes and some Raman-inactive modes activated by lowering in the symmetry caused by the disordering effects in the cation sublattice are reported.
Keywords
Semiconductors , Crystal symmetry , Raman spectroscopy and scattering , Crystallization , Energy dispersive analysis of X-rays
Journal title
Materials Chemistry and Physics
Serial Year
2012
Journal title
Materials Chemistry and Physics
Record number
1064948
Link To Document