• Title of article

    Mechanical properties and structure of Gd-doped PbTe

  • Author/Authors

    Zahari K. Zlatanov، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2007
  • Pages
    5
  • From page
    470
  • To page
    474
  • Abstract
    Pb1−xGdxTe single crystals, doped with x = 0.001–0.04, were grown by using a Bridgeman method. The influence of doping element Gd on microstructure and creating of defects into materials were investigated. The experimental results from recent studies of microhardness and structural measurements (X-ray, SEM), are shown. Powder X-ray diffractograms have shown that the cubic-phase NaCl, with a lattice parameter a = 6.46 Å, was obtained for all samples with different compositions. To determine the sampleʹs microhardness, the Vickers indentor has been used consecutively loaded by 50 g. The substitutional site of the Gd3+ ions and the influence of the concentration of defects, as vacancies and impurity atoms, on structural parameters are discussed. Here we investigate the concentration dependence of impurity ion sites into host lattice of PbTe, and a model of formation of a three-dimensional superlattice of ionized impurities is presented.
  • Keywords
    Semiconductors , Crystal growth , Microstructure , Mechanical properties
  • Journal title
    Materials Chemistry and Physics
  • Serial Year
    2007
  • Journal title
    Materials Chemistry and Physics
  • Record number

    1065451