Title of article
Morphology variation in growth process of InN pillar crystal films on Si (1 0 0) substrate by halide chemical vapor deposition under atmospheric pressure
Author/Authors
H. Sugiura، نويسنده , , S. Wakasugi، نويسنده , , H. Mizutani، نويسنده , , T. Nakamura، نويسنده , , N. Takahashi، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2008
Pages
3
From page
176
To page
178
Abstract
The morphology variation in growth process of InN films on Si (1 0 0) substrate by means of AP–HCVD investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray pole-figure. These results imply that the InN pillar crystal is grown perpendicular to Si (1 0 0) substrate with increasing growth time.
Keywords
Superconductor , Vapor deposition , crystal structure , Nitride , CVD
Journal title
Materials Chemistry and Physics
Serial Year
2008
Journal title
Materials Chemistry and Physics
Record number
1065893
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