• Title of article

    Microstructure related transport phenomena in chemically deposited PbSe films

  • Author/Authors

    M. Shandalov، نويسنده , , Z. Dashevsky، نويسنده , , Y. Golan، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2008
  • Pages
    4
  • From page
    132
  • To page
    135
  • Abstract
    We report on the electrical properties of chemically deposited PbSe films with controlled microstructure ranging from nanocrystalline to single crystal films. Control over the deposition mechanism consequently allowed control over the physical properties of the obtained films. The electrical conductivity, carrier concentration, drift mobility and carrier scattering mechanism were correlated with the film morphology. In polycrystalline PbSe films, the activation energy of the electrical conductivity is governed by the nature of the grain boundaries. In monocrystalline PbSe films, conductivity vs. temperature depends on carrier scattering from lattice vibrations.
  • Keywords
    Semiconductors , Chemical deposition , Electrical properties , Lead selenide , Electrical characterization
  • Journal title
    Materials Chemistry and Physics
  • Serial Year
    2008
  • Journal title
    Materials Chemistry and Physics
  • Record number

    1066248