Title of article
Microstructure related transport phenomena in chemically deposited PbSe films
Author/Authors
M. Shandalov، نويسنده , , Z. Dashevsky، نويسنده , , Y. Golan، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2008
Pages
4
From page
132
To page
135
Abstract
We report on the electrical properties of chemically deposited PbSe films with controlled microstructure ranging from nanocrystalline to single crystal films. Control over the deposition mechanism consequently allowed control over the physical properties of the obtained films. The electrical conductivity, carrier concentration, drift mobility and carrier scattering mechanism were correlated with the film morphology. In polycrystalline PbSe films, the activation energy of the electrical conductivity is governed by the nature of the grain boundaries. In monocrystalline PbSe films, conductivity vs. temperature depends on carrier scattering from lattice vibrations.
Keywords
Semiconductors , Chemical deposition , Electrical properties , Lead selenide , Electrical characterization
Journal title
Materials Chemistry and Physics
Serial Year
2008
Journal title
Materials Chemistry and Physics
Record number
1066248
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