• Title of article

    Semiconductivities of Sn-doped In2O3 powder prepared by co-precipitation through ion exchange method

  • Author/Authors

    Xiebin Zhu، نويسنده , , Tao Jiang، نويسنده , , Guanzhou Qiu، نويسنده , , Boyun Huang، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2008
  • Pages
    4
  • From page
    342
  • To page
    345
  • Abstract
    Sn-doped In2O3 (ITO) powder was prepared by co-precipitation through ion exchange method with the solution of InCl3 and SnCl4·5H2O under the condition of the different temperatures and different molar ratios of Sn to In. ITO precursor was analyzed by TG-DTA, and the morphology, phase composition and particle size of the powder were characterized by TEM and XRD. The effects of calcination temperature and molar ratio of Sn/In on the phase composition, particle size and conductivity were discussed. The results showed that the phase transformation occurs at a temperature of over 332 °C, and an ITO powder with perfect crystalline structure, minimum crystallite size, minimum powder resistance and the best conductivity can be prepared at the calcination temperature of 700 °C with 10% molar ratio of Sn/In.
  • Keywords
    Semiconductors , Precipitation , Semiconductivity , Electron microscopy (TEM)
  • Journal title
    Materials Chemistry and Physics
  • Serial Year
    2008
  • Journal title
    Materials Chemistry and Physics
  • Record number

    1066286