• Title of article

    Structural and electronic properties of LaN

  • Author/Authors

    Mohamed Ghezali، نويسنده , , Bouhalouane Amrani، نويسنده , , Youcef Cherchab، نويسنده , , Nadir Sekkal، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2008
  • Pages
    5
  • From page
    774
  • To page
    778
  • Abstract
    Using two different first principle methods, the full potential linear augmented plane waves (FPLAPW) and a version of the full potential linear muffin-tin orbitals method (FPLMTO) which enables an accurate treatment of the interstitial regions, the structural properties of LaN are investigated. It predicts the possibility of an additional local minimum in the wurtzite (B4) phase, approximately like ScN and YN for which a second minimum for the hexagonal A3 phase was found. A competition between the rocksalt (B1) and the wurtzite (B4) as the ground state phase is found depending on whether LDA (local density approximation) or GGA (generalized gradient approximation) is used. The electronic properties are also discussed.
  • Keywords
    LaN , Structural properties , Phase transitions , Ground state phase
  • Journal title
    Materials Chemistry and Physics
  • Serial Year
    2008
  • Journal title
    Materials Chemistry and Physics
  • Record number

    1066365