Title of article
Structural and electronic properties of LaN
Author/Authors
Mohamed Ghezali، نويسنده , , Bouhalouane Amrani، نويسنده , , Youcef Cherchab، نويسنده , , Nadir Sekkal، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2008
Pages
5
From page
774
To page
778
Abstract
Using two different first principle methods, the full potential linear augmented plane waves (FPLAPW) and a version of the full potential linear muffin-tin orbitals method (FPLMTO) which enables an accurate treatment of the interstitial regions, the structural properties of LaN are investigated. It predicts the possibility of an additional local minimum in the wurtzite (B4) phase, approximately like ScN and YN for which a second minimum for the hexagonal A3 phase was found. A competition between the rocksalt (B1) and the wurtzite (B4) as the ground state phase is found depending on whether LDA (local density approximation) or GGA (generalized gradient approximation) is used. The electronic properties are also discussed.
Keywords
LaN , Structural properties , Phase transitions , Ground state phase
Journal title
Materials Chemistry and Physics
Serial Year
2008
Journal title
Materials Chemistry and Physics
Record number
1066365
Link To Document