Title of article
Optical and structural characterization of copper indium disulfide thin films
Author/Authors
D.O. Henderson، نويسنده , , R. Mu، نويسنده , , A. Ueda، نويسنده , , M.H. Wu، نويسنده , , E.M. Gordon، نويسنده , , Y.S. Tung، نويسنده , , M. Huang، نويسنده , , J. Keay، نويسنده , , L.C. Feldman، نويسنده , , J.A. Hollingsworth، نويسنده , , W.E. Buhro، نويسنده , , J.D. Harris، نويسنده , , A.F. Hepp، نويسنده , , R.P. Raffaelle، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2001
Pages
5
From page
585
To page
589
Abstract
Thin films of copper indium disulfide (CuInS2) were synthesized by spray chemical vapor deposition. Rutherford backscattering measurements were used to determine the composition and thickness of the films. The elemental ratios were found to be within 2% of stoichiometrically correct CuInS2. The thickness of the films was found to be approximately 1.0 μm. An optical band-gap of approximately 1.44 eV for this material was determined by optical transmission spectroscopy. Reflectance spectroscopy identified phonon bands centered at 225, 291 and 317 cm−1.
Keywords
Vapour deposition , Semi-conductors , Optical
Journal title
Materials and Design
Serial Year
2001
Journal title
Materials and Design
Record number
1066773
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