Bi-directional field effect light emitting and absorbing heterojunction with Ga/sub 0.8/In/sub 0.2/N/sub 0.015/As/sub 0.985/ at 1250 nm

The basic operation of a novel GaInNAs/GaAs based light emitting/absorbing device operating at 1250 nm is described. The device is a bi-directional field effect light emitting and absorbing heterojunction (BiFEEAH), which can simultaneously emit and detect light. This feature makes it possible to construct a wavelength converter, where one end of the device absorbs incoming light and the other end emits light at a different wavelength. The current device consists of a simple GaAs p-i-n structure, containing a single 90 A GaInNAs quantum well in its intrinsic region. This is fabricated into a four contact device with separate n and p conducting channels.