Title of article
Simulation of gain and modulation bandwidths of 1300 nm RWG InGaAsN lasers
Author/Authors
M.D.، Dawson, نويسنده , , H.D.، Sun, نويسنده , , J.C.L.، Yong, نويسنده , , J.M.، Rorison, نويسنده , , M.، Othman, نويسنده , , K.A.، Williams, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-7
From page
8
To page
0
Abstract
The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 (mu)m MQW ridge waveguide (RWG) InGaAsN laser are presented and hightemperature characteristics are shown.
Keywords
Distributed systems
Journal title
IEE PROCEEDINGS OPTOELECTRONICS
Serial Year
2003
Journal title
IEE PROCEEDINGS OPTOELECTRONICS
Record number
106789
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