Design considerations for 1.3 (mu)m emission of GaInNAs/GaAs strained quantum-well lasers

The authors explore theoretically different indium and nitrogen compositions and well widths for 1.3 (mu)m emission of GaInNAs strained quantum well lasers. The nitrogen-induced conduction band non-parabolicity is accounted for through the band anti-crossing model, and valence-band mixing effects and strain are treated exactly. Basic design rules are outlined not only on the basis of the emission wavelength but also in terms of optimal device operation.