Title of article
Normal-incidence intersubband absorption in AlGaSb quantum wells: enhanced oscillator strength and new functionalities using asymmetry
Author/Authors
V.، Berger, نويسنده , , C.، Alibert, نويسنده , , J.M.، Jancu, نويسنده , , P.، Senellart, نويسنده , , E.، Peter, نويسنده , , F.، Chevrier, نويسنده , , A.، Joullie, نويسنده , , O.، Krebs, نويسنده , , P.، Voisin, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-380
From page
381
To page
0
Abstract
The properties of intersubband transitions in L-valley GaAlSb-AlSb quantum wells are reinvestigated using the extended-basis sp/sup 3/ d/sup 5/ s/sup */ tight binding model. New functionalities for mid-infrared photodetection, associated with normal incidence and the use of asymmetric quantum wells, are also discussed.
Keywords
Distributed systems
Journal title
IEE PROCEEDINGS OPTOELECTRONICS
Serial Year
2003
Journal title
IEE PROCEEDINGS OPTOELECTRONICS
Record number
106848
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