Title of article
Low-noise silicon carbide X-ray sensor with wide operating temperature range
Author/Authors
G.، Bertuccio, نويسنده , , R.، Casiraghi, نويسنده , , A.، Cetronio, نويسنده , , C.، Lanzieri, نويسنده , , F.، Nava, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-172
From page
173
To page
0
Abstract
A silicon carbide (SiC) sensor is presented with high energy resolution in X-ray spectroscopy over a wide temperature range (27-100(degree)C). The sensor, consisting of a Schottky barrier diode on high resistivity epitaxial SiC, is characterised by an extremely low noise due to its ultra-low reverse current density even at high operating temperature (15 pA/cm/sup 2/ at 27(degree)C and 0.5 nA/cm/sup 2/ at 100(degree)C). Equivalent noise charges as low as 17 electrons rms at 27(degree)C and 47 electrons rms at 100(degree)C have been measured, allowing X-ray spectroscopy with an energy resolution as low as 315 eV and 797 eV FWHM, respectively.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107063
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