Nanostructuring of organic and chalcogenide resists by direct DUV laser beam writing

A direct writing deep ultraviolet (DUV) laser lithography system was used to write surface relief gratings into an organic positive DUV resist and into amorphous chalcogenide layers. For both material groups feature sizes down to 160 nm with aspect ratios of two and more were realised. The nanostructures in chalcogenide layers emerge directly during the writing process, without any development or etching process.