Title of article
GaInNAs-based distributed feedback laser diodes emitting at 1.5 (mu)m
Author/Authors
A.، Forchel, نويسنده , , D.، Gollub, نويسنده , , M.، Fischer, نويسنده , , M.، Kamp, نويسنده , , S.، Moses, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-426
From page
427
To page
0
Abstract
For the first time, GaAs-based 1.5 (mu)m singlemode emission has been realised utilising GaInNAs active-layer material and lateral distributed feedback. The double quantum well separate confinement laser structure was grown by plasma-assisted molecular beam epitaxy. A threshold current of 240 mA and an external efficiency of 0.11 W/A could be demonstrated with a sidemode suppression ratio of better than 26 dB in pulsed operation. Singlemode emission up to 1506.5 nm has been realised.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107228
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