Long wavelength MOCVD grown InGaAsN-GaAsN quantum well lasers emitting at 1.378-1.41 (mu)m

Low threshold InGaAsN QW lasers with lasing wavelength at 1.378 and 1.41 (mu)m were demonstrated by metal organic chemical vapour deposition (MOCVD). The threshold current densities are 563 and 1930 A/cm/sup 2/ for the 1.378 and 1.41 (mu)m emitting lasers, respectively. The significant improvement of device performance is believed due to utilisation of high temperature annealing and introduction of GaAsN barriers to suppress the resulting wavelength blue shift. A comparable characteristic temperature coefficient of the external differential quantum efficiency, T/sub 1/, is observed for the InGaAsN-GaAsN QW laser compared to similar InGaAsN/GaAs structures.