Title of article
Fe-doped InP semi-insulating buried heterostructure for high speed and high power operations in directly modulated semiconductor laser
Author/Authors
D.، Kim, نويسنده , , J.، Shim, نويسنده , , D.، Jang, نويسنده , , Y.، Eo, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-936
From page
937
To page
0
Abstract
A buried heterostructure based on Fe-doped InP semi-insulating layers is optimised for both high output power and large modulation bandwidth operations up to 70(degree)C in a 10 Gbit/s directly modulated 1.3 (mu)m InGaAsP/InP distributed feedback laser. The slope efficiency of 0.19 W/A and -3 dB bandwidth of 10 GHz at 1.5 times threshold current is demonstrated experimentally.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107562
Link To Document