Title of article
Room temperature Hall mobilities above 1900 cm/sup 2//V s in MBE-grown AlGaN/GaN HEMT structures
Author/Authors
D.S.، Katzer, نويسنده , , S.C.، Binari, نويسنده , , X.، Xu, نويسنده , , D.F.، Storm, نويسنده , , B.V.، Shanabrook, نويسنده , , D.S.، McVey, نويسنده , , R.P.، Vaudo, نويسنده , , G.R.، Brandes, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-1225
From page
1226
To page
0
Abstract
An AlGaN/GaN high electron mobility transistor (HEMT) structure has been grown by plasma-assisted molecular beam epitaxy (MBE) on a free-standing hydride vapour phase epitaxy-grown GaN substrate with a threading dislocation density of ~8*10/sup 6/ cm/sup -2/. A room temperature Hall mobility of 1920 cm/sup 2//V s with a sheet carrier density of 0.91*10/sup 13/ cm/sup -2/ was measured. This is the highest room temperature electron mobility reported for an MBE-grown AlGaN/GaN structure. HEMTs fabricated on this material displayed excellent pinch-off, low gate leakage currents, and an off-state breakdown of 90 V.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107751
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