Title of article
High-quality 1.3 (mu)m GaInNAs single quantum well lasers grown by MBE
Author/Authors
A.، Larsson, نويسنده , , S.M.، Wang, نويسنده , , X.D.، Wang, نويسنده , , Y.Q.، Wei, نويسنده , , M.، Sadeghi, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-1337
From page
1338
To page
0
Abstract
High-quality 1.3 (mu)m GaInNAs/GaNAs single quantum well lasers grown by molecular beam epitaxy are reported. The broad area lasers show a record low threshold current density of 318 A/cm/sup 2/ for a cavity length of 1 mm, a transparent current density of 84 A/cm/sup 2/, and a characteristic temperature of 103 K from 8 to 70(degree)C.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107826
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