Title of article
High-temperature (T=490 K) operation of 5.8 (mu)m quantum cascade lasers with InP/GaInAs waveguides
Author/Authors
G.، Scarpa, نويسنده , , M.-C.، Amann, نويسنده , , A.، Friedrich, نويسنده , , G.، Boehm, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-1415
From page
1416
To page
0
Abstract
5.8 (mu)m Ga/sub 0.4/In/sub 0.6/As/Al/sub 0.56/In/sub 0.44/As strain-compensated quantum-cascade lasers with InP and GaInAs cladding layers using solid-source molecular-beam epitaxy have been fabricated. Low threshold current densities and high-temperature operation of uncoated devices, with a record value of 490 K, have been achieved in pulsed mode.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107877
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