Title of article
Low-resistance Pd/Ir/Au ohmic contacts on p-GaAsSb
Author/Authors
I.، Adesida, نويسنده , , J.H.، Jang, نويسنده , , H.K.، Cho, نويسنده , , J.W.، Bae, نويسنده , , N.، Pan, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-154
From page
155
To page
0
Abstract
Ohmic contacts based on Pd/Ir/Au metallisations have been formed on highly doped (5*10/sup 19/ cm/sup -3/) p-type GaAsSb. Typical hole mobility in the MOCVD-grown p-GaAsSb was measured to be 50 cm/sup 2//Vs. Electrical characteristics of ohmic contacts were measured utilising the transfer length method. The ohmic contact exhibited specific contact resistivity less than 10/sup -8/ (Omega)-cm/sup 2/ and transfer length less than 100 nm. X-ray photoelectron spectroscopy study was also utilised to investigate the interactions between the multilayer metallisations and the ternary GaAsSb compound semiconductor.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107963
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