Toward n-channel organic thin film transistors based on a distyryl-bithiophene derivatives

Solution and solid-state properties of two new perfluoroalkyl end-substituted analogues of distyryl-bithiophene (CF3-DS2T and diCF3-DS2T) are presented. Vacuum deposited thin films were investigated by atomic force microscopy, X-ray diffraction, and implemented as active layers into organic thin film transistors. While physicochemical measurements in solution suggest a preferential hole injection and transport inside CF3-DS2T and diCF3-DS2T films, electrical measurements performed under high vacuum show that CF3-DS2T behaves as n-type semiconductor while no charge transport was measured in diCF3-DS2T. The results highlighted the importance of substituents on conjugated backbone and on the resulting fine ordering in solid state to control the charge transport.