Initial phase of C60 deposition on SI(100) and GAAS(100) studied in situ by Raman spectroscopy Original Research Article

C60 was evaporated from a Knudsen cell onto the (100) surfaces of Si and GaAs at room temperature under ultra-high vacuum conditions. The deposition process was monitored in situ by Raman spectroscopy in the spectral region 1350–1600 cm−1, where the most intense Raman features of C60, are observed.