• Title of article

    Effects of hydrogen on electronic properties of doped diamond Original Research Article

  • Author/Authors

    Y. Dai، نويسنده , , C.X. Yan، نويسنده , , A.Y. Li، نويسنده , , Y. Zhang، نويسنده , , S.H. Han، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2005
  • Pages
    6
  • From page
    1009
  • To page
    1014
  • Abstract
    We have investigated the effects of hydrogen on the electronic structure of diamond doped boron and sulfur using cluster model method within the frame of ab initio density functional theory (DFT). The results show that the presence of hydrogen results in a deep donor level with no change of conductivity type in sulfur-doped diamond samples and the formation of the multiple hydrogen–boron complexes may cause a conductivity type transition in the hydrogen-rich boron-doped diamond samples.
  • Keywords
    Diamond , Electronic properties
  • Journal title
    Carbon
  • Serial Year
    2005
  • Journal title
    Carbon
  • Record number

    1121077