Title of article
Effects of hydrogen on electronic properties of doped diamond Original Research Article
Author/Authors
Y. Dai، نويسنده , , C.X. Yan، نويسنده , , A.Y. Li، نويسنده , , Y. Zhang، نويسنده , , S.H. Han، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
6
From page
1009
To page
1014
Abstract
We have investigated the effects of hydrogen on the electronic structure of diamond doped boron and sulfur using cluster model method within the frame of ab initio density functional theory (DFT). The results show that the presence of hydrogen results in a deep donor level with no change of conductivity type in sulfur-doped diamond samples and the formation of the multiple hydrogen–boron complexes may cause a conductivity type transition in the hydrogen-rich boron-doped diamond samples.
Keywords
Diamond , Electronic properties
Journal title
Carbon
Serial Year
2005
Journal title
Carbon
Record number
1121077
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