Mid-Gap State Formed Inside Mott Gap of 1T-TaS2 Single Crystals and Metal-Insulator Transition

We have measured electrical resistivity, Hall coefficient, thermoelectric power, and magnetization for charge-density wave (CDW) material 1T-TaS2 single crystals grown by varying the excess sulfur content x es. We have revealed that a small mid-gap state is formed inside the Mott gap and that anomalous low temperature transport is not governed by the Mott gap state itself but by the mid-gap state. The electric properties of the mid-gap state are modified by increasing x es (or hole doping), and we have found the insulator-metal transition occurs by hole doping below 60K.