Title of article
Ion irradiation and defect formation in single layer graphene Original Research Article
Author/Authors
Giuseppe Compagnini، نويسنده , , Filippo Giannazzo، نويسنده , , Sushant Sonde، نويسنده , , Vito Raineri، نويسنده , , Emanuele Rimini، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
7
From page
3201
To page
3207
Abstract
Ion irradiation by 500 keV C+ ions has been used to introduce defects into graphene sheets deposited on SiO2 in a controlled way. The combined use of Raman spectroscopy and atomic force microscopy (AFM) allowed one to clarify the mechanisms of disorder fo
Journal title
Carbon
Serial Year
2009
Journal title
Carbon
Record number
1126358
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