A novel numerical approach to heterojunction bipolar transistors circuit simulation Original Research Article

In this paper we present a novel computational method for calculating the heterojunction bipolar transistor (HBT) physical characteristics in the time domain. To calculate the HBT high frequency properties, the Gummel–Poon equivalent circuit model is applied to replace the HBT in the circuit and a set of governing ordinary differential equations (ODEs) is formulated. We directly decouple the system ODEs and solve each decoupled ODE with the monotone iterative method in the time domain. This solution methodology proposed here has been applied to semiconductor device simulation by us earlier, and we find this method for the HBT simulation has good accuracy and converges globally. Compared with the HSPICE circuit simulator results, our results present the accuracy, efficiency, and robustness of the method.