Title of article
Mechanical fatigue of polysilicon: Effects of mean stress and stress amplitude Original Research Article
Author/Authors
H. Kahn، نويسنده , , L. Chen، نويسنده , , R. Ballarini، نويسنده , , A.H. Heuer، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2006
Pages
12
From page
667
To page
678
Abstract
Polycrystalline silicon (polysilicon) fatigue specimens with micrometer-sized dimensions were fabricated and subjected to cyclic loading using an integrated electrostatic actuator. The fatigue effects were determined by comparing the single edge-notched beam monotonic bend strength measured after cyclic loading to the monotonic strength of “virgin” specimens that had received no cycling. Both strengthening and weakening were observed, depending on the levels of mean stress and fatigue stress amplitude during the cyclic loading. Monotonic loading with similar sub-critical stress levels had no effect. The physical mechanisms responsible for this behavior are discussed, and a model based on grain boundary plasticity is presented for the strengthening behavior.
Keywords
Semiconductor , Fatigue , Micromechanical modeling , Fracture
Journal title
ACTA Materialia
Serial Year
2006
Journal title
ACTA Materialia
Record number
1141708
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