• Title of article

    Mechanical fatigue of polysilicon: Effects of mean stress and stress amplitude Original Research Article

  • Author/Authors

    H. Kahn، نويسنده , , L. Chen، نويسنده , , R. Ballarini، نويسنده , , A.H. Heuer، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2006
  • Pages
    12
  • From page
    667
  • To page
    678
  • Abstract
    Polycrystalline silicon (polysilicon) fatigue specimens with micrometer-sized dimensions were fabricated and subjected to cyclic loading using an integrated electrostatic actuator. The fatigue effects were determined by comparing the single edge-notched beam monotonic bend strength measured after cyclic loading to the monotonic strength of “virgin” specimens that had received no cycling. Both strengthening and weakening were observed, depending on the levels of mean stress and fatigue stress amplitude during the cyclic loading. Monotonic loading with similar sub-critical stress levels had no effect. The physical mechanisms responsible for this behavior are discussed, and a model based on grain boundary plasticity is presented for the strengthening behavior.
  • Keywords
    Semiconductor , Fatigue , Micromechanical modeling , Fracture
  • Journal title
    ACTA Materialia
  • Serial Year
    2006
  • Journal title
    ACTA Materialia
  • Record number

    1141708