Title of article
The role of compound formation in reactive wetting: the Cu/SiC system Original Research Article
Author/Authors
C. Rado، نويسنده , , B. Drevet، نويسنده , , N. EUSTATHOPOULOS، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2000
Pages
9
From page
4483
To page
4491
Abstract
Wettability and reactivity in the liquid Cu/SiC couple are studied by the sessile drop technique in high vacuum or purified helium using monocrystalline or sintered α-SiC. This couple exhibits a very unusual wetting behaviour. Particularly, during spreading, an amazing drop shape is established and, for specific conditions, “hexagonal wetting” is observed. We show that these observations can be correctly explained using the concepts of reactive wetting developed recently.
Keywords
Surfaces & interfaces , Bonding , Corrosion , High temperature , Carbides
Journal title
ACTA Materialia
Serial Year
2000
Journal title
ACTA Materialia
Record number
1142009
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