• Title of article

    The role of compound formation in reactive wetting: the Cu/SiC system Original Research Article

  • Author/Authors

    C. Rado، نويسنده , , B. Drevet، نويسنده , , N. EUSTATHOPOULOS، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2000
  • Pages
    9
  • From page
    4483
  • To page
    4491
  • Abstract
    Wettability and reactivity in the liquid Cu/SiC couple are studied by the sessile drop technique in high vacuum or purified helium using monocrystalline or sintered α-SiC. This couple exhibits a very unusual wetting behaviour. Particularly, during spreading, an amazing drop shape is established and, for specific conditions, “hexagonal wetting” is observed. We show that these observations can be correctly explained using the concepts of reactive wetting developed recently.
  • Keywords
    Surfaces & interfaces , Bonding , Corrosion , High temperature , Carbides
  • Journal title
    ACTA Materialia
  • Serial Year
    2000
  • Journal title
    ACTA Materialia
  • Record number

    1142009