Title of article
What is behind the inverse Hall–Petch effect in nanocrystalline materials? Original Research Article
Author/Authors
C.E. Carlton، نويسنده , , P.J. Ferreira، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2007
Pages
8
From page
3749
To page
3756
Abstract
An inverse Hall–Petch effect has been observed for nanocrystalline materials by a large number of researchers. This effect implies that nanocrystalline materials get softer as grain size is reduced below a critical value. Postulated explanations for this behavior include dislocation-based models, diffusion-based models, grain-boundary-shearing models and two-phase-based models. In this paper, we report an explanation for the inverse Hall–Petch effect based on the statistical absorption of dislocations by grain boundaries, showing that the yield strength is dependent on strain rate and temperature and deviates from the Hall–Petch relationship below a critical grain size.
Keywords
Nanocrystalline materials , Grain boundaries , Theory , Plastic deformation , Dislocations
Journal title
ACTA Materialia
Serial Year
2007
Journal title
ACTA Materialia
Record number
1143070
Link To Document