• Title of article

    What is behind the inverse Hall–Petch effect in nanocrystalline materials? Original Research Article

  • Author/Authors

    C.E. Carlton، نويسنده , , P.J. Ferreira، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2007
  • Pages
    8
  • From page
    3749
  • To page
    3756
  • Abstract
    An inverse Hall–Petch effect has been observed for nanocrystalline materials by a large number of researchers. This effect implies that nanocrystalline materials get softer as grain size is reduced below a critical value. Postulated explanations for this behavior include dislocation-based models, diffusion-based models, grain-boundary-shearing models and two-phase-based models. In this paper, we report an explanation for the inverse Hall–Petch effect based on the statistical absorption of dislocations by grain boundaries, showing that the yield strength is dependent on strain rate and temperature and deviates from the Hall–Petch relationship below a critical grain size.
  • Keywords
    Nanocrystalline materials , Grain boundaries , Theory , Plastic deformation , Dislocations
  • Journal title
    ACTA Materialia
  • Serial Year
    2007
  • Journal title
    ACTA Materialia
  • Record number

    1143070