• Title of article

    Growth mechanism of Ni3Sn4 in a Sn/Ni liquid/solid interfacial reaction Original Research Article

  • Author/Authors

    J. Shen، نويسنده , , Y.C. Chan، نويسنده , , George S.Y Liu ، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2009
  • Pages
    11
  • From page
    5196
  • To page
    5206
  • Abstract
    The chemical interfacial reaction of Ni plates with eutectic Sn–3.5Ag lead-free solder was studied by microstructural observations and mathematical calculations. Compared with the Sn–3.5Ag–0.75Ni/Ni interfacial reaction, based on a simple model of the growth of the liquid/solid chemical compound layer, the growth mechanism of Ni3Sn4 in the Sn–3.5Ag/Ni interfacial reaction is discussed and presented. The growth process of Ni3Sn4 in the Sn/Ni liquid/solid reaction interface involves the net effect of several interrelated phenomena, such as volume diffusion, grain boundary diffusion, grain boundary grooving, grain coarsening, and dissolution into the molten solder. The growth time exponent n and morphology of Ni3Sn4 were found to be dependent on these factors.
  • Keywords
    Interfacial reaction , Sn/Ni , Growth mechanism , Microstructure
  • Journal title
    ACTA Materialia
  • Serial Year
    2009
  • Journal title
    ACTA Materialia
  • Record number

    1144504