SnO/sub 2/ RGTO UV activation for CO monitoring

In this paper, we present recent results regarding the activation of sensors with high density power light of energy in the range of the energy gap of the semiconductor. We report the measurements registered for tin-oxide rheotaxial growth and thermal oxidation deposited layers using CO as a target gas. The influence of doping on the activated gas-sensing properties has been investigated. We have found the value of the incident power corresponding to the best gas-sensing performances (response enhancement and kinetics). The comparison between dark and irradiation condition is presented for the different kind of layers tested.