Preparation, Structure, and Properties of 0.3Pb (Zn1\3Nb2\3)O3-0.7PbTiO3 Thin Films on LaNiO3\YSZ\Si Substrates

Perovskite 0.3Pb(Zn1\3Nb2\3)O3-0.7PbTiO3 (PZN-0.7PT) thin films with (100)-orientation were prepared by a sol-gel method on Si(100) substrates. An yttriumstabilized ZrO2 (YSZ) film was used as a buffer layer between a LaNiO3 (LNO) film and the Si substrate, where the LNO layer served as both the bottom electrode and seeding layer for the PZN-0.7PT films. The YSZ suppressed the diffusion of the LNO into the Si substrate. Our prepared LNO film on the YSZ buffer layer showed a strong (100)-orientation. Its resistivity was as low as 7.6 × 10-4 (omega)·cm. The thickness of the PZN-0.7PT film fabricated on the LNO\YSZ\Si substrate was about 1.0 (mu)m, and the average grain size was approximately 0.1-0.2 (mu)m. We have demonstrated that the LNO seeding layer plays a key role in obtaining the perovskite structure with (100)-preferred orientation in the PZN-0.7PT film. The dielectric and ferroelectric properties of our PZN0.7PT films on the LNO\YSZ\Si substrate were also characterized.