Title of article
Transmission Electron Microscopy and High-Resolution Electron Microscopy Study of YNi2B2C Thin Film on Y2O3-Buffered MgO
Author/Authors
Simon، P. نويسنده , , Kramer، U. نويسنده , , Cao، G. H. نويسنده , , Wimbush، S. C. نويسنده , , Holzapfel، B. نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2004
Pages
-841
From page
842
To page
0
Abstract
An YNi2B2C thin film deposited on an Y2O3-buffered (001) MgO substrate by pulsed laser deposition has been investigated by X-ray diffraction, transmission electron microscopy (TEM), and high-resolution electron microscopy. Cross-sectional TEM analyses show that the YNi2B2C film grows in the [001] direction while the Y2O3 buffer layer exhibits columnar growth in the [001] and [111] directions on the (001) MgO substrate, with the growth in the [001] direction being preferred. The orientation relationships of the YNi2B2C film, Y2O3 buffer layer, and MgO substrate were obtained. The primary orientation relationship YNi2B2C(001)[110] Y2O3(001)[100] MgO(001)[100], evident from X-ray analyses, was able to be confirmed in the TEM study. A hexagonal impurity phase Y0.915Ni4.12B with lattice parameters a = 1.491 nm and c = 0.692 nm was identified at the interface between the Y2O3 buffer layer and the YNi2B2C thin film
Journal title
CHEMISTRY OF MATERIALS
Serial Year
2004
Journal title
CHEMISTRY OF MATERIALS
Record number
115120
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