Title of article
Pentacene Thin Film Growth
Author/Authors
Malliaras، George G. نويسنده , , Clancy، Paulette نويسنده , , Ruiz، Ricardo نويسنده , , Choudhary، Devashish نويسنده , , Nickel، Bert نويسنده , , Toccoli، Tullio نويسنده , , Chang، Kee-Chul نويسنده , , Mayer، Alex C. نويسنده , , Blakely، Jack M. نويسنده , , Headrick، Randall L. نويسنده , , Iannotta، Salvatore نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2004
Pages
-4496
From page
4497
To page
0
Abstract
Pentacene stands out as a model molecule among organic semiconductors due to its ability to form well-ordered films that show a high field effect mobility. We discuss the processes involved in pentacene film growth, emphasizing differences with respect to inorganic films. The influence of growth parameters such as the substrate nature and temperature, the deposition rate, and the kinetic energy of the molecular beam on the structure and morphology of pentacene films are discussed. Finally, we overview recent attempts to model pentacene film nucleation and growth, and draw attention to the role of dislocations.
Keywords
atmospheric VOC , inhibition of S(IV) autoxidation , isoprene oxidation , Sulphur dioxide , isoprene
Journal title
CHEMISTRY OF MATERIALS
Serial Year
2004
Journal title
CHEMISTRY OF MATERIALS
Record number
115650
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