Title of article
Effect of electrical resistivity on ultrasonic attenuation in NpTe
Author/Authors
Devraj Singh، نويسنده , , Pramod K. Yadawa، نويسنده , , Saurabh K. Sahu، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
4
From page
476
To page
479
Abstract
Ultrasonic attenuation due to electron–phonon interaction (EPI) has been computed in semimetallic single crystal neptunium telluride (NpTe) in low temperatures 5–80 K. For the same evaluation, we have also evaluated ultrasonic velocity, electronic viscosity and second order elastic constants (SOEC). The SOEC of NpTe have been evaluated using the Born model of ionic solid. The behaviour of ultrasonic attenuation is quite similar to its inverse resistivity. The ultrasonic attenuation due to EPI is most significant at 40 K. Computed results of ultrasonic parameter have been compared and discussed.
Keywords
A. Semimetallic , C. Ultrasonic properties
Journal title
Cryogenics
Serial Year
2010
Journal title
Cryogenics
Record number
1173078
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