Fine structure analysis of Si KL2,3V Auger spectra of Si, SiC and SiO2

High-resolution Si KL2,3V Auger spectra of Si, SiC and SiO2 are measured to investigate changes in the electronic structure of the valence band in these materials. Significant differences between the lineshapes of these spectra are observed. First-principles electronic structure calculations are also carried out, which reproduce the lineshapes of the KL2,3V Auger spectra of Si, SiC and SiO2 observed experimentally. The core–hole effects on the theoretical spectral lineshapes are also taken into account in the present calculations.