Sensitisation of erbium emission by silicon nanocrystals-doped SnO2

SnO2 thin films undoped and doped with antimony (Sb), erbium (Er) and Si nanocrystals (Si-nc) have been grown on silicon (Si) substrate using sol–gel method. Room-temperature photoluminescence (PL) measurement of undoped SnO2, under excitation at 280 nm, shows only one broad emission at 395 nm, which is related to oxygen vacancies. The PL of Er3+ ions was found to be enhanced after doping SnO2 with Sb and Si-nc. The excitation process of Er is studied and discussed. The calculation of cross-section suggests a sensitisation of Er PL by Si-nc.