A red europium (III) ternary complex for InGaN-based light-emitting diode

One kind of europium (III) ternary complex was synthesized, and its photoluminescence properties were investigated. This complex exhibits broad excitation band in near-UV range, and strong red emission which is due to the 5D0–7Fj transitions of Eu3+ ions. The luminescence quantum yield for the Eu3+ complex is 0.17. Thermogravimetric analysis confirms a high thermal stability of the complex with a decomposition temperature of 344 °C. All the characteristics indicate that the Eu3+ complex is a highly efficient red phosphor suitable to be excited by near UV light. An intense red light-emitting diode was fabricated by combining the europium (III) ternary complex with a ~395 nm-emitting InGaN chip.