Title of article
Study of thermal strain relaxation in GaAs grown on Ge/Si substrates
Author/Authors
D. Colombo، نويسنده , , E. Grilli، نويسنده , , M. Guzzi، نويسنده , , S. Sanguinetti، نويسنده , , A. Fedorov، نويسنده , , H. von K?nel، نويسنده , , G. Isella، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
4
From page
375
To page
378
Abstract
A detailed analysis of the thermal strain relaxation in GaAs/Ge/Si structures by means of crack formation is presented. The study was performed through optical microscopy and photoluminescence measurements. The as grown epilayers were found to be in a metastable state with respect to crack formation. Repeated thermal cycling increased the crack density up to an asymptotic limit. The thermal strain is not fully relaxed even near to the asymptotic crack density.
Keywords
Strain relaxation , Photoluminescence , GaAs on Si
Journal title
Journal of Luminescence
Serial Year
2006
Journal title
Journal of Luminescence
Record number
1261460
Link To Document