Optical properties and thermal stability of GaAsN alloy films

The optical properties of GaAsN films have been studied by photoluminescence (PL) and photo-modulation reflection (PR). The effects of postgrowth anneal on the band structure and optical efficiency have been shown basing on these measurements. Both the samples with close N content grown at different temperatures exhibit high crystalline quality according to the X-ray diffraction. The alloy films show remarkable stability against rapid thermal annealing (RTA) process. The blueshift of the PL peak energy is found to be 3.8 meV when annealing up to 900 °C, meanwhile the PL intensity increases significantly until RTA at 850 °C.