The characteristics of GaN-based blue LED on Si substrate

InGaN multiple quantum well (MQW) light-emitting diodes (LEDs), grown by metalorganic chemical vapor deposition (MOCVD) on Si (1 1 1) substrates, were successfully bonded and transferred onto new Si substrate. After chemical etching Si substrate and inductively coupled plasma (ICP) etching buffer layer, vertical structure GaN blue LEDs were fabricated. The characteristics of the lateral structure LEDs (grown on Si substrate) and the vertical structure LEDs (bonded on new Si substrate) have been investigated, and the performance of the vertical structure LEDs have obviously been improved compared to the lateral structure LEDs. The improved performance is due to the smaller tensile stress and series resistance in the vertical LEDs than that in lateral LEDs. The electroluminescence difference between vertical LEDs chips and the vertical LEDs lamps can be explained by the difference in heat dissipation.