Structural, iono and thermoluminescence properties of heavy ion (100 MeV Si7+) bombarded Zn2SiO4:Sm3+ nanophosphor

Structural, iono (IL) and thermoluminescence (TL) studies of Zn2SiO4:Sm3+ (1–5 mol%) nanophosphor bombarded with swift heavy ions in the fluence range 3.91×1012–21.48×1012 cm−2 have been carried out. The average crystallite sizes for pristine and ion irradiated for 3.91×1012 ions cm−2 and 21.48×1012 ions cm−2 were found to be 34, 26 and 20 nm. With increase of ion fluence, the intensity of XRD peaks decreases and FWHM increases. The peak broadening indicates the stress induced point/clusters defects produced due to heavy ion irradiation. IL studies were carried out for different Sm3+ concentrations in Zn2SiO4 by irradiating with ion fluence of 15.62×1012 ions cm−2. The characteristic emission peaks at ∼562, 599, 646 and 701 nm were recorded by exciting Si7+ ions in the fluence range 3.91×1012–21.48×1012 ions cm−2. These peaks were attributed to 4G5/2→6H5/2 (562 nm), 4G5/2→6H7/2 (599 nm), 4G5/2→6H9/2 (646 nm), and 4G5/2→6H5/2 (701 nm) transitions of Sm3+ . The highest emission was recorded at 3 mol% of Sm3+ doped Zn2SiO4. TL studies were carried out for 3 mol% Sm3+ concentration in the fluence range 3.91×1012–21.48×1012 ions cm−2. Two TL glow peaks at 152 and 223 °C were recorded. The kinetic parameters (E, b, and s), were estimated using Chenʹs peak shape method. Simple glow curve structure (223 °C), highly resistive, increase in TL intensity up to 19.53×1012 ions cm−2, simple trap distribution makes Zn2SiO4:Sm3+ (3 mol%) phosphor highly useful in radiation dosimetry.