Effect of rapid thermal treatment on photoluminescence of surface passivated porous silicon

The photoluminescence of porous silicon with and without carbon deposition fabricated by plasma-enhanced chemical vapor deposition technique has been investigated. After the deposition, the rapid thermal processes in the temperature ranging from 500 to 1100 °C have been carried out. It was found that after the carbon deposition a new intense blue emission appeared. The rapid thermal processes at 800and 900 °C could enhance the blue emission, while the other rapid thermal processes quenched it. Finally, the mechanism for the effect of carbon deposition and rapid thermal processes on photoluminescence properties of porous silicon was discussed.