Effects of the HfO2 sinterization temperature on the erbium luminescence

The effect of the sinterization temperature of erbium doped hafnium oxide on erbium ion luminescence is studied. Samples were prepared using sinterization temperatures of 400, 600, 800, and 1000 °C over periods of 12 and 24 h. Transitions from the excited states 4F7/2 and 4S3/2 to the ground state 4I15/2 are identified, and this allows for the study of the incorporation of Er3+ in the HfO2 matrix. Results show that the Er3+ ions can occupy different sites in the host and the resulting optical behavior depends on the sinterization temperature. The emission efficiency does not depend exclusively on the sinterization temperature but also on the site occupied in the host matrix.