Title of article
Using thin emitters to control BVce0 effects in punch-through diodes for ESD protection
Author/Authors
R van Dalen، نويسنده , , G.A.M Hurkx، نويسنده , , M.A.A in ‘t Zandt، نويسنده , , E.A Hijzen، نويسنده , , P.J.W Weijs، نويسنده , , A. J. den Dekker ، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
19
From page
311
To page
329
Abstract
We present results of a novel punch-through diode structure which uses a thin SiGe emitter to effectively suppress impact-ionisation-related (BVce0) effects that typically start to dominate the electrical characteristics of conventional punch-through devices at voltages above 2.5–3.0 V, resulting in the occurrence of negative resistances (snap-back) and severely limiting the application range.
Keywords
Punchthroughdiode , Snapbackprevention , ESDprotection , Bipolar
Journal title
JOURNAL OF ELECTROSTATICS
Serial Year
2002
Journal title
JOURNAL OF ELECTROSTATICS
Record number
1264464
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