Microscopic electric field in the surroundings of ionized impurities in semiconductor

A novel approximate analytical expression for the screened potential and electric field around ionized impurities in semiconductor is proposed. This potential distribution is an improvement of the well-known Debye–Hückel screening since it takes into account also the influence of the neighboring ionized atoms. Numerical solution of the screened microscopic electrical field has been calculated. The influences of ionized impurity atoms adjacent to the observed one have been taken into account by the appropriate boundary conditions. Plots of the presented analytical potential and the Debye–Hückel approximation are compared to the numerical solution of the microscopic screened potential for typical concentrations of impurities.