Title of article
Investigation of ESD protection elements under high current stress in CDM-like time domain using backside laser interferometry
Author/Authors
interferometry S. Bychikhina، نويسنده , , V. Dubeca، نويسنده , , M. Litzenbergera، نويسنده , , D. Poganya، نويسنده , , E. Gornika، نويسنده , , G. Groosb، نويسنده , , K. Esmarkb، نويسنده , , M. Stecherb، نويسنده , , W. Stadlerb، نويسنده , , H. Gieserc، نويسنده , , H. Wolfc، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
15
From page
241
To page
255
Abstract
Switching dynamics and current flow homogeneity under very-fast TLP (vf-TLP) stress is investigated in smart power and CMOS technology ESD protection devices by means of optical transient interferometric mapping (TIM) techniques with sub-nanosecond time resolution. Comparison between the device behavior under vf- and conventional TLP stress is discussed. The sub-ns time resolution enables a detailed insight into the triggering behavior of protection elements.
Keywords
Semiconductordevicetesting , Electrostaticdischarges(ESD) , Opticalmapping , Photothermaleffects , Thermoopticeffects
Journal title
JOURNAL OF ELECTROSTATICS
Serial Year
2003
Journal title
JOURNAL OF ELECTROSTATICS
Record number
1264541
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